2SD966 npn silicon epitaxial planar transistor for low-frequency power amplification and stroboscope. the transistor is subdivided into three groups p, q and r, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) symbol value unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 7 v peak collector current i cp 8 a collector current i c 5 a collector power dissipation pc 1 w junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2SD966 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =2v, i c =0.5a p q r at v ce =2v, i c =2a h fe h fe h fe h fe 120 230 340 150 - - - - 250 380 600 - - - - - collector cutoff current at v cb =10v i cbo - - 0.1 a emitter cutoff current at v eb =7v i ebo - - 0.1 a collector output capacitance at v cb =20v,f=1.0mhz cob - - 50 pf collector to emitter voltage at i c =1ma v ceo 20 - - v emitter to base voltage at i e =10 a v ebo 7 - - v collector to emitter saturation voltage at i c =3a,i b =0.1a v ce(sat) - - 1 v transition frequency at v cb =6v, i e =-50ma,f=200mhz f t - 150 - mhz
pc-ta i c -v ce 1.2 1.0 0.8 0.6 0.4 0.2 0 020 40 60 80 100 120 140 160 ambient temperature ta ( c) c o l l e c t o r p o w e r d i s s i p a t i o n p c ( w ) o 2.4 0.4 0.8 0 1.2 1.6 2.0 2.0 2 .4 1.61.2 0.8 0.4 0 collector to emitter voltage v ce (v) c o l l e c t o r c u r r e n t i c ( a ) i c -v be 6 5 4 c o l l e c t o r c u r r e n t i c ( a ) 3 2 1 0 base to emitter voltage v be (v) 2.0 1.61.2 0.8 0.4 0 c o l l e c t o r t o e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) ( v ) 0.03 0.1 0.3 1 3 10 v ce(sat) -i c 0.001 collector current ic (a) 13 0.3 0.1 0.03 0.01 10 0.01 0.003 h fe -i c f o r w a r d c u r r e n t t r a n s f e r r a t i o h f e 600 200 300 400 500 100 0 collector current ic (a) 0.1 0.03 0.01 0.3 1 3 10 f t -i e emitter current i e (a) -0.01 -0.03 -0.1 -0.3 -1 -3 -10 350 t r a n s i t i o n f r e q u e n c y f t ( m h z ) 0 150 200 250 300 400 100 50 cob-v cb 80 c o l l e c t o r o u t p u t c a p a c i t a n c e c o b ( p f ) 0 20 40 60 100 collector to base voltge v cb (v) 1 3 10 30 100 ta=25 c i b =7ma 6ma 5ma 4ma 3ma 2ma o 1ma o 25 c v ce =2v ta=75 c o -25 c o 25 c o o ta=75 c o -25 c i c /i b =30 v ce =2v o 25 c o ta=75 c o -25 c i e =0 f=1mhz ta=25 c o v cb =6v ta=25 c o 2SD966
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